Industrial

The L4941 is a three terminal 5V positive regulator with low dropout voltage and quiescent current, suitable for industrial and consumer applications.

L4931 series is a very low dropout regulator with extremely low dropout voltage (0.4V) and extremely low quiescent current (typical 50µA), particularly suitable for low noise, low power applications, especially in battery powered systems.

L2SC4617*T1 is a general purpose NPN silicon transistor manufactured by LESHAN RADIO COMPANY, LTD. Its rated maximum collector-emitter voltage is 60V, maximum collector-base voltage is 50V, maximum emitter-base voltage is 7V, maximum collector current is 0.15A, maximum collector power dissipation is 0.15W, maximum working temperature is 150℃, and minimum working temperature is -55℃.

This data sheet introduces the characteristics of the KTY84-1 series silicon temperature sensors, including temperature range, package, pin, marking, etc.

This document contains technical data for KTC601U epitaxial planar NPN transistor. The transistor is suitable for general purpose and switching applications, and it features a super-minimold package, excellent temperature response, and high pairing property in hFE.

KSM-60�LO and KSM-70�LO are optic receiver modules for infrared remote control systems. They consist of a high-speed PIN photodiode and a preamplifier IC in a small package. These modules have features such as low power consumption, shielded against electrical field disturbance, high immunity against ambient light, easy interface with the main board, and TTL and CMOS compatibility. They can be used in various appliances like TV, VTR, air conditioners, car stereo units, computers, interior controlling appliances, etc.

The data is about KPY 62-AK and KPY 69-AK silicon piezoresistive absolute pressure sensors, including product characteristics, marking, model, maximum rating, electrical characteristics, etc.

KMM5364005CSW/CSWG 4Byte 4Mx36 SIMM is a 4Mx36bits Dynamic RAM high density memory module produced by Samsung. It consists of two CMOS 4Mx16bits and one CMOS Quad CAS 4Mx4bits DRAMs packaged in TSOP, mounted on a 72-pin glass epoxy substrate. Each DRAM has a 0.1 or 0.22uF decoupling capacitor mounted on the printed circuit board. The KMM5364005C is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.

KMM5364003BSW/BSWG is a 4Mx36bits dynamic random access memory (DRAM) high density memory module manufactured by Samsung. The module consists of two CMOS 4Mx16bits and one CMOS Quad CAS 4Mx4bits DRAMs in TSOP packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM5364003B is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.

This document describes the features and characteristics of the Samsung KMM53216000B high density memory module, including 16Mx32bits dynamic RAM, fast page mode operation, CAS-before-RAS and hidden refresh capability, etc.

This is a preliminary version data sheet for KM681002A and KM681002AI CMOS SRAM. The product is a 128Kx8 high-speed static RAM, operating at 5V, with a revolutionary pin-out. It can operate within the commercial and industrial temperature range.