32K x 8 STATIC RAM—SOI HX6356 Aerospace Electronics
The HX6356 is a 32K × 8 (32,768‑word) static RAM fabricated with Honeywell’s RICMOS™ IV silicon‑on‑insulator process. It operates from a single 5 V ±10 % supply, supports both CMOS and TTL compatible I/O, and consumes less than 15 mW per MHz in active mode. Typical read access time is 14 ns at 5 V.
Designed for harsh radiation environments, the device is hardened to a total ionizing dose of 1×10⁸ rad(Si) and a transient dose‑rate upset of 1×10⁸ rad(Si)/s. It features a soft‑error rate below 1×10⁻⁷ upsets/bit‑day, latch‑up immunity, and operates over –55 °C to +125 °C. Packaging options include 36‑lead CFP bottom‑braze and top‑braze variants.
| Memory Capacity | 32K × 8 bits |
|---|---|
| Supply Voltage | 4.5 V – 5.5 V (single 5 V ±10 %) |
| Typical Power Consumption | < 15 mW/MHz (active) |
| Read Access Time | Typical 14 ns at 5 V |
The device operates from a single 5 V supply, with a typical range of 4.5 V to 5.5 V.