This document describes the features and characteristics of the HY27US(08/16)281A series 128Mbit (16Mx8bit / 8Mx16bit) NAND Flash.
The HY27US281A series is a 128‑Mbit NAND flash memory offered in x8 and x16 configurations with 3.3 V and 1.8 V supply options. It features high‑density storage, fast page programming, and reliable block erase for mass‑storage applications.
This datasheet lists the device’s electrical characteristics, pin descriptions, command set, timing parameters, mechanical dimensions and marking information, allowing designers to integrate the part into their systems.
| Density | 128 Mbit (16 M × 8 bit / 8 M × 16 bit) |
|---|---|
| Supply voltage (3.3 V version) | 2.7 V – 3.6 V |
| Page size (x8) | 512 + 16 bytes |
| Page size (x16) | 256 + 8 words |
| Block size (x8) | 16 KB + 512 bytes spare |
| Block size (x16) | 8 KB + 256 words spare |
| Typical page program time | 200 µs |
| Typical block erase time | 2 ms |
| Program/Erase cycles | 100 000 cycles |
| Data retention | 10 years |
| Package (TSOP1) | 48‑Pin, 12 × 20 × 1.2 mm |
| Package (USOP1) | 48‑Pin, 12 × 17 × 0.65 mm |
The 3.3 V device operates with VCC from 2.7 V to 3.6 V.
A typical page program operation takes about 200 µs.
A typical block erase is completed in about 2 ms.
The device is rated for up to 100 000 program/erase cycles.