HYNIK HY57V561620(L)T 4Banks x 4M x 16Bit Synchronous DRAM

Update: 28 September, 2023

The HY57V561620T is a 268,435,456-bit CMOS Synchronous DRAM, ideally suited for main memory applications that require large memory density and high bandwidth. It is organized as 4 banks of 4,194,304 x 16 and offers fully synchronous operation with internally pipelined design for high bandwidth. It supports programmable options including CAS latency, burst length, and burst count sequence.

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MD5 Checksum: 061B8901E2BEDC6A696814411C3A7536

Publication date: 04 June, 2012

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PDF Link: HYNIK HY57V561620(L)T 4Banks x 4M x 16Bit Synchronous DRAM PDF