This is a data sheet about HYB18T1G400AF,HYB18T1G800AF,HYB18T1G160AF 1 Gbit DDR2 SDRAM
The HYB18T1G400/800/160AF series are 1 Gb DDR2 SDRAM devices offered by Infineon Technologies. They support data rates up to 667 Mb/s per pin, operate from a 1.8 V ±0.1 V supply, and are available in lead‑free FBGA packages (68‑pin for x4/x8, 92‑pin for x16).
The datasheet provides detailed information on device organization, timing parameters, power consumption, package pinouts, and functional features such as DLL‑enabled operation, On‑Die Termination, and programmable latency.
| Maximum Clock Frequency | 333 MHz |
|---|---|
| Data Rate | 400 – 667 Mb/s per pin |
| CAS Latency (CL) | 3 – 5 |
| Supply Voltage | 1.8 V ±0.1 V |
| Package (x4/x8) | 68‑pin FBGA |
| Package (x16) | 92‑pin FBGA |
| Page Size (x4/x8) | 1 KB |
| Page Size (x16) | 2 KB |
The devices operate from a 1.8 V ±0.1 V power supply.
68‑pin FBGA packages are used for x4 and x8 parts, while 92‑pin FBGA packages are used for x16 parts.
Up to 667 Mb/s per pin can be achieved.
CAS latency values of 3, 4, or 5 cycles are supported.