HY29F080 is an 8 Megabit (1M x 8) 5 Volt-only flash memory. It features 5 Volt read, program, and erase operations, high performance with access times as fast as 70 ns, low power consumption, and compatibility with JEDEC standards. It supports sector erase architecture, erase suspend/resume, sector group protection, and more.
The HY29F080 provides 8 Megabit (1M × 8) flash storage powered by a single 5 V supply. It features fast 70 ns access, low active read current (15 mA) and low standby current (5 µA), and supports at least 100 k program/erase cycles.
The device is offered in industry‑standard 44‑pin PSOP and 40‑pin TSOP packages, with sixteen 64 KB sectors that can be erased individually or in groups. It includes sector‑group protect/unprotect functions, erase‑suspend/resume, and hardware reset capabilities.
| Memory size | 8 Megabit (1M × 8) |
|---|---|
| Supply voltage | 5 V (single‑supply) |
| Access time | 70 ns |
| Active read current | 15 mA typical |
| Program/erase current | 30 mA typical |
| Standby current | 5 µA maximum |
| Program/erase cycles | ≥ 100 000 |
| Package types | 44‑Pin PSOP, 40‑Pin TSOP |
| Sector size | 64 KB (16 sectors) |
| Byte programming time | 7 µs typical |
| Sector erase time | 1.0 s typical |
| Chip erase time | 16 s typical |
The device operates from a single 5‑volt supply.
It supports a minimum of 100 000 program/erase cycles.
It is offered in 44‑pin PSOP and 40‑pin TSOP packages, including a reverse‑pinout TSOP version.
The memory consists of sixteen 64 KB sectors that can be erased individually or in groups.