Industrial

This document describes the features and characteristics of the IRF150 HEXFET transistors, including low on-state resistance, high transconductance, superior reverse energy, and diode recovery speed. These transistors are suitable for applications such as switching power supplies and motor control.

IRF1407S and IRF1407L are advanced HEXFET® power MOSFET products introduced by International Rectifier. These products utilize advanced processing techniques to achieve extremely low on-resistance and fast switching speed. They are suitable for a wide range of applications and provide high efficiency and reliability.

This mosfet is produced by irf company and is suitable for automotive electronic applications. The rated maximum voltage is 75v, the rated maximum current is 130a, the rated maximum switching speed is 4.6v/ns, and the rated maximum working temperature is 175 °c.

This document describes an automotive MOSFET product with low on-resistance and high repetitive avalanche current rating. It utilizes the latest processing techniques to achieve extremely low on-resistance and fast switching speed, making it suitable for automotive and other applications.

This document introduces a HEXFET® power MOSFET specifically designed for automotive applications, featuring extremely low on-resistance, high temperature operation, fast switching speed, and improved repetitive avalanche rating.

IRF1404Z is a high performance power MOSFET device produced by IR company, it has ultra low on-resistance, 175 °C junction temperature, fast switching speed and other features, suitable for automotive electronics and other applications

The IRF1404S/IRF1404L is the Seventh Generation HEXFET® Power MOSFET from International Rectifier and utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF1404L) is available for low- profile applications.

IRF140 is a power MOSFET produced by Intersil. It has a rated current and voltage of 28A and 100V, respectively, and a conduction resistance of 0.077Ω.

This datasheet provides information about the IRF1312 power MOSFET, including its package type, maximum voltage, maximum current, and maximum power

IRF1310S HEXFET® Power MOSFET PD is a high-performance power MOSFET manufactured by the fourth generation International Rectifier (IR) HEXFET technology

IRF1310NS/L HEXFET® is an extremely efficient and reliable power device from International Rectifier company, which utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF1310NL) is available for low- profile applications.

This document describes an automotive MOSFET product with low on-resistance and fast switching speed, suitable for automotive and other applications. The product has a 175°C operating temperature and improved repetitive avalanche rating.

This document describes a HEXFET® power MOSFET specifically designed for automotive applications, featuring extremely low on-resistance, high temperature operation, and suitability for a wide range of applications.