Industrial

This document describes the features and characteristics of the KV1400 variable capacitance diode released by TOKO, Inc. in January 2000. These include excellent linearity, large capacitance ratio, miniature package, and small capacitance deviation on tape/reel.

The document introduces the features and characteristics of the KS88C4616/C4632 series of single-chip 8-bit CMOS microcontrollers launched by Samsung Electronics Co., Ltd. These microcontrollers have a fast and efficient CPU, a variety of integrated peripherals, and programmable ROM.

KPT/KPSE Circular Connectors

KM416C4000C and KM416C4100C are two CMOS DRAM chips. They are both 4Mx16 bit Fast Page Mode DRAMs and have high speed random access capability to memory cells within the same row. Their refresh cycles (4K Ref. or 8K Ref.) and access times (-5 or -6) are optional, and they all have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. These chips are manufactured using Samsung's advanced CMOS process to realize high bandwidth, low power consumption and high reliability.

This document describes the features and characteristics of Ohmite Mfg. Co.'s K, R, S, V, and X series R.F. molded chokes.

KA78LXXA/KA78L05AA is a 3-terminal 0.1A positive voltage regulator, with output voltage of 5V, 6V, 8V, 9V, 10V, 12V, 15V, 18V and 24V, maximum output current of 100mA, thermal overload protection and short circuit current limiting function

KA78XXE/KA78XXAE series of three-terminal posi- tive regulator are available in the TO-220/D-PAK package and with several fixed output voltages, making them useful in a wide range of applications.

K4S641633H is a mobile memory chip produced by Samsung. It uses synchronous design to provide precise clock control and supports a wide range of operating frequencies, programmable burst lengths and programmable latencies. It can be used for various high bandwidth and high performance memory system applications.

This document is a version history record of the DDR SDRAM DDR SDRAM specification, describing the different versions and revisions of the product.

1N6626 is a Siliconix Schottky diode with fast recovery time and low power consumption. It is suitable for various switch power supply and inverter circuits.

This data sheet provides the absolute maximum ratings for the PD-90396G HEXFET® MOSFET, including continuous drain current, pulsed drain current, maximum power dissipation, linear derating factor, gate-to-source voltage, single pulse avalanche energy, avalanche current, repetitive avalanche energy, peak diode recovery dv/dt, operating junction temperature, storage temperature range, lead temperature, weight, etc.

The document describes the features and characteristics of a product.

IXFK/IXFN series is a N-channel enhancement mode avalanche rated, high dv/dt, low trr power MOSFET from IXYS. This product has international standard packages, UL 94 V-0 flammability classification, SOT-227B miniBLOC aluminum nitride insulation, low RDS(on) HDMOSTM process, Unclamped Inductive Switching (UIS) rated, Fast intrinsic rectifier and other features. It can be applied to DC-DC converters, synchronous rectification, battery chargers, switched-mode and resonant-mode power supplies, DC choppers, temperature and lighting controls.

The ISL9007 is a member of the ISL high-performance LDO family, delivering 400mA continuous output current, output voltage accuracy of ±1.8% (temperature, line and load), very high PSRR (75dB @ 1kHz), output noise less than 30µVrms. Quiescent current is 50µA (typical), shutdown current is 1µA (max), suitable for portable wireless equipment.