KM416C4000C and KM416C4100C are two CMOS DRAM chips. They are both 4Mx16 bit Fast Page Mode DRAMs and have high speed random access capability to memory cells within the same row. Their refresh cycles (4K Ref. or 8K Ref.) and access times (-5 or -6) are optional, and they all have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. These chips are manufactured using Samsung's advanced CMOS process to realize high bandwidth, low power consumption and high reliability.
This document describes the KM416C4000C and KM416C4100C, which are 4M x 16 bit Fast Page Mode CMOS Dynamic RAMs. These devices offer high-speed random access of memory cells within the same row and are fabricated using Samsung's advanced CMOS process to ensure high bandwidth, low power consumption, and reliability.
The datasheet provides detailed specifications including absolute maximum ratings, recommended operating conditions, DC and AC characteristics, capacitance values, and timing diagrams. Key features include CAS-before-RAS refresh capability, RAS-only and Hidden refresh modes, and availability in Plastic TSOP(II) packages.
| Memory Capacity | 4M x 16 bit |
|---|---|
| Refresh Cycle Options | 8K Ref. or 4K Ref. |
| Supply Voltage | +5.0V +/- 10% |
| Package Type | Plastic TSOP(II) |
| Storage Temperature | -55 to +150 °C |
The parts are KM416C4000C and KM416C4100C.
The access time (tRAC) is 50ns.
Yes, it supports Fast Page Mode operation for high speed random access within the same row.