SAMSUNG KM416C4000C KM416C4100C CMOS DRAM handbook

KM416C4000C and KM416C4100C are two CMOS DRAM chips. They are both 4Mx16 bit Fast Page Mode DRAMs and have high speed random access capability to memory cells within the same row. Their refresh cycles (4K Ref. or 8K Ref.) and access times (-5 or -6) are optional, and they all have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. These chips are manufactured using Samsung's advanced CMOS process to realize high bandwidth, low power consumption and high reliability.


Brand
Samsung
File format
PDF
Published
05 June, 2012
Updated
30 September, 2023
MD5 checksum
D73DB58EC0704AF04125769969FE4DBF
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