Industrial

The ICS85356I 2:1, Differential-to-3.3V Dual LVPECL / ECL Clock Multiplexer is a high speed differential multiplexer. The device can be configured as a 2:1 multiplexer. Dual 3.3V LVPECL outputs. Selectable differential CLKxx, nCLKxx inputs. CLKxx, nCLKxx pair can accept the following input types: LVPECL, LVDS, LVHSTL, SSTL and HCSL. The ICS85356I can therefore be used as a differential translator to translate almost any differential input type to LVPECL. It can also be used in ECL mode by setting VCC=0V and VEE to -3.0V to - 3.8V. The ICS85356I adds negligible jitter to the input clock and can operate at high frequencies in excess of 900MHz thus making it ideal for use in demanding applications such as SONET, Fibre Channel, 1 Gigabit/10 Gigabit Ethernet.

ISOCOM ICPL4502 is a high-speed optocoupler that uses an LED and an integrated photodetector to provide 2500V RMS electrical isolation.

ICL3207E, ICL3217E +/- 15kV ESD Protected, +3V to +5.5V, Low Power, 250kbps, RS-232 Transmitters/Receivers

This datasheet provides the technical specifications of the IC41C4405x and IC41LV4405x series dynamic random access memories. These devices are 4Mx4 bit high-performance CMOS dynamic random access memories. The devices support Fast Page Mode, allowing 2048 or 4096 random accesses within a single row with an access cycle time as short as 20 ns per 4-bit word.

This is a user manual for Renesas Technology Corp.'s products.

REJ03G0185-0100Z is a low leakage, low zener impedance, 400mW maximum power dissipation zener diode which is ideally suited for stabilized power supply, etc. The product features a wide spectrum from 1.88V through 38.52V of zener voltage for flexible application.

32Kx8 Radiation Hardened ROM is a high performance 32768 word x 8-bit read only memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation environments. The ROM operates over the full military temperature range and re- quires only a single 5 V ± 10% power supply. The ROM is available with either TTL or CMOS compatible I/O. Power consumption is typically less than 15 mW/MHz in operation, and less than 5 mW when de-selected. The ROM operation is fully asynchronous, with an associated typical access time of 14 ns. Honeywell’s enhanced SOI RICMOS™IV (Radiation Insen- sitive CMOS) technology is radiation hardened through the use of advanced and proprietary design, layout, and pro- cess hardening techniques. The RICMOS™ IV process is a 5-volt, SIMOX CMOS technology with a 150 Å gate oxide and a minimum drawn feature size of 0.75 µm (0.6 µm effective gate length—Leff). Additional features include tungsten via plugs, Honeywell’s proprietary SHARP pla- narization process, and a lightly doped drain (LDD) struc- ture for improved short channel reliability.

The product is an optical fixed attenuator, the feature is that it has a user-friendly push-pull mechanism, the attenuation is guaranteed over a wide bandwidth of 1310±30nm and 1510-1620nm, and the maximum input power is 200mW

The Hitachi HM62256B Series is a CMOS static RAM organized 32,768-word × 8-bit. It realizes higher performance and low power consumption by employing 0.8 µm Hi-CMOS process technology. The device, packaged in 8 × 14 mm TSOP, 8 × 13.4 mm TSOP with thickness of 1.2 mm, 450 mil SOP (foot print pitch width), 600 mil plastic DIP, or 300 mil plastic DIP, is available for high density mounting. It offers low power standby power dissipation; therefore, it is suitable for battery backup systems.

HM5118165 is a 16M EDO DRAM manufactured by Hitachi, using 0.5um CMOS technology, providing 50ns/60ns/70ns access time, 1024 refresh cycles, and 16ms refresh time.

The HJ6668 is a PNP epitaxial planar transistor designed for general-purpose amplifier and switching applications.