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This document is about the technical information of IXYS products, including the features and performance parameters. The product adopts low RDS (on) HDMOSTM process and has a rugged polysilicon gate cell structure. It is suitable for applications such as motor controls, DC choppers, switched-mode power supplies, DC-DC converters, and linear regulators.

IXTK 33N50 is a high current N-channel enhancement mode MOSFET from IXYS. It has a maximum drain-source voltage of 500V and a maximum continuous drain current of 33A. It has fast switching speeds and is used in motor controls, DC choppers, uninterruptible power supplies (UPS), switch-mode and resonant-mode power supplies.

IXTK 62N25 is a high current N-channel enhancement mode MOSFET with low RDS(on), rugged polysilicon gate cell structure, international standard package, fast switching time, etc. It is suitable for motor control, DC chopper, switched-mode power supply and other applications.

IXTQ 82N25P is a N-Channel Enhancement Mode Power MOSFET from IXYS. It features international standard packages, unclamped inductive switching (UIS) rating, low package inductance and easy driving and protection.

ixth/ixtm 6 n80/6 n80a is a power mosfet produced by ixys, which has the characteristics of low rds(on), hdmostm process, rugged polysilicon gate cell structure, low package inductance (<5 nH)

This document describes the features and characteristics of IXYS' N-channel enhancement mode MegaMOSTMFET product, including maximum ratings, test conditions, and characteristic values.

The document describes the features and characteristics of IXYS Corporation's MegaMOSTMFET N-Channel Enhancement Mode Power MOSFET. This MOSFET has a maximum voltage rating of 700V, maximum current of 15A, an on-state resistance of 0.45Ω, and low RDS(on) value. It is suitable for applications such as switch-mode and resonant-mode power supplies, motor controls, and uninterruptible power supplies.

The document introduces a P-Channel Enhancement Mode Avalanche Rated Standard Power MOSFET (IXTH 16P20) from IXYS. It features an international standard package, low RDS(on), rugged polysilicon gate cell structure, and unclamped inductive switching (UIS) capability.

IXTH / IXTM 21N50 and 24N50 are IXYS's MegaMOSTMFET N-channel enhancement mode MOSFETs with a maximum voltage of 500 V, a maximum current of 21 A and 24 A, and a maximum power of 300 W.

The document describes the features and characteristics of the product, IXTH 30N50.

IXTH 35N30/40N30/40N30 MegaMOSTMFET N-Channel Enhancement Mode power MOSFET devices, with a maximum operating voltage of 300V, a maximum current of 35A/40A/40A, and a fast switching time, are used in switch-mode power supplies, inverters, motor drives and other fields.

The document describes the features and characteristics of the MegaMOSTMFET N-Channel Enhancement Mode product from IXYS, including international standard packages, low on-resistance, rugged polysilicon gate cell structure, low package inductance, and fast switching times. The product is suitable for switch-mode and resonant-mode power supplies, motor controls, uninterruptible power supplies (UPS), and DC choppers.

This document describes the features and characteristics of the IXTH 50P10 standard power MOSFET product from IXYS, including international standard package, low RDS(on) value, rugged polysilicon gate cell structure, avalanche rated, and low package inductance. This product is suitable for applications such as high side switching, push-pull amplifiers, DC choppers, and automatic test equipment, and it offers advantages such as easy mounting, space savings, and high power density.

5N100 and 5N100A are N-channel enhancement mode standard power MOSFETs from IXYS. The products have international standard packages, low RON, high reliability and other characteristics. They are suitable for switch-mode and resonant-mode power supplies, motor controls, uninterruptible power supplies (UPS) and DC choppers.

This document introduces the high current power MOSFET products from IXYS. The features of the products include international standard package, 3000V isolation voltage, low RDS (on), rugged polysilicon gate cell structure, low drain-to-case capacitance, and low package inductance. The products are suitable for various applications.