Industrial

1.55mm DFB-LD module with polarization maintaining fiber pig-tail for use in 2.5Gb/s and 10Gb/s digital optical communication systems

OM1324STM is a three-terminal precision adjustable positive voltage regulator with an epoxy resin sealed package. It has thermal shutdown, current limiting and safe-area control. With heat sinking, these devices can deliver up to 1.5 amps of output current. The LCC-20 device is limited to .5 amps. The unit also features output voltages that can be fixed from 1.2 volts to 37 volts using external resistors.

Oki Semiconductor’s OD9601N, OD9602N, and OD9604N PD Preamp Module Family are surface-mount 1.3-µm, InGaAs PIN photo diodes combined with a transimpedance amplifier. The OD9601N operates at 1.25 Gbps in STM4/OC12/OC24 environments. The OD9602N operates at 622 Mbps in STM4/OC12 environments. The OD9604N operates at 2.488 Gbps in STM16/OC48 environments. These photo diode preamp modules are coupled to a single-mode fiber with a pigtail.

BCR183./SEMB11 PNP Silicon Digital Transistor, which is used in switching circuit, inverter, interface circuit, driver circuit, built-in bias resistor (R1 = 10kΩ , R2 = 10kΩ), 6-PIN packages, with two (galvanic) internal isolated transistors with good matching in one package.

The document introduces a series of radiation-hardened MOSFET devices specifically designed for commercial and military space applications. These devices have enhanced power MOSFET immunity to Single Event Effects (SEE), particularly Single Event Gate Rupture (SEGR). They also have a total dose hardness of 100K RADS, making them ideal for harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been compromised.

MA3V175E, MA3V176E are high performance Schottky diodes with short reverse recovery time trr and small terminal capacitance Ct, suitable for switching circuits.

2SB970 is a silicon PNP epitaxial planer type transistor for low-voltage output amplification

2SB942, 2SB942A are silicon PNP epitaxial planar type transistors for low-frequency power amplification. They are complementary to 2SD1267 and 2SD1267A. They have high forward current transfer ratio hFE and low collector to emitter saturation voltage VCE(sat). They come in a full-pack package which can be installed to the heat sink with one screw.

2SB1508/2SD2281 is a PNP/NPN transistor manufactured by SANYO. It is mainly used for medium and low voltage high current switching applications. Its main features include low emitter-collector capacitance, high current gain, low saturation voltage and high power density.

This is a document about the supplier of 2SB1255.

This data sheet provides the absolute maximum ratings, product summary, brand, model and other information of IRHNA9260.

BB669/BB689 is a tuning diode produced by Philips Corporation. It has a very high capacitance ratio and low resistance, and is suitable for 2-Band-hyperband-TV-tuners and other fields.

This datasheet provides the maximum ratings, electrical characteristics, and other information of BAW56S. BAW56S is a silicon switching diode produced by Onsemi. It has high switching speed and a double common anode configuration. The maximum ratings include reverse voltage, peak reverse voltage, forward current, surge forward current, total power dissipation, junction temperature, and storage temperature. The electrical characteristics include breakdown voltage, reverse current, forward voltage, etc.

The document describes the features and characteristics of the SG1626/SG2626/SG3626 products, including compatibility with other models, output capability, operating voltage range, rise and fall times, propagation delays, etc. The product utilizes high voltage Schottky logic to convert TTL signals to high-speed outputs, suitable for driving power MOSFETs and other large capacitive loads requiring high-speed switching.