MA3V175E, MA3V176E are high performance Schottky diodes with short reverse recovery time trr and small terminal capacitance Ct, suitable for switching circuits.
This document provides technical specifications for the Panasonic MA3V175E and MA3V176E silicon epitaxial planar type switching diodes. It details features such as short reverse recovery time and small terminal capacitance, suitable for switching circuits.
The datasheet lists absolute maximum ratings including reverse voltage up to 80V for the MA3V176E model, peak forward surge currents, and junction temperature limits. Electrical characteristics cover parameters like reverse current, forward voltage, terminal capacitance, and reverse recovery time under specific test conditions.
| Type | Silicon epitaxial planar type |
|---|---|
| Reverse Voltage (MA3V175E) | 40 V |
| Junction Temperature | 150 °C |
| Forward Voltage (DC) | 1.2 V |
| Reverse Recovery Time | 3 ns |
The maximum reverse voltage rating for the MA3V175E is 40 V.
The storage temperature range is from -55 to +150 °C.
The rated input/output frequency is 100 MHz.