This is a document about the supplier of 2SB1255.
This document is a technical datasheet for the Panasonic 2SB1255, a Silicon PNP Epitaxial Planar Darlington Type Power Amplifier. It is designed as a complementary pair with the 2SD1895 and is optimized for high DC current gain applications in hi-fi output systems.
The datasheet provides absolute maximum ratings, electrical characteristics such as transition frequency and saturation voltages, and graphical representations of safe operating areas (ASO) under various ambient temperatures. It includes package dimensions and thermal performance data.
| Product Type | Silicon PNP Epitaxial Planar Darlington Type Power Amplifier |
|---|---|
| Complementary Pair Model | 2SD1895 |
| Optimum Application | 90W hi-fi output |
| DC Current Gain (hFE) | 5000 ~ 30000 |
| Collector-Emitter Saturation Voltage (VCE(sat)) | < 2.5V |
| Package Type | Full Pack |
| Collector-Emitter Voltage (Vceo) | -140 V |
| Emitter-Base Voltage (Vebo) | -5 V |
| Collector Current (Ic) | 7 A |
| Peak Collector Current (Icp) | -12 A |
| Collector Power Dissipation (Pc) | 100 W |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature Range | -55 ~ +150 °C |
The DC current gain (hFE) ranges from 5,000 to 30,000 depending on the operating conditions.
The continuous collector current (Ic) is rated at 7 A.
The maximum junction temperature (Tj) is 150 °C.