The document introduces a series of radiation-hardened MOSFET devices specifically designed for commercial and military space applications. These devices have enhanced power MOSFET immunity to Single Event Effects (SEE), particularly Single Event Gate Rupture (SEGR). They also have a total dose hardness of 100K RADS, making them ideal for harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been compromised.
This document provides technical specifications for the Intersil FSL9130D and FSL9130R series of enhancement-mode silicon-gate power field-effect transistors. These devices feature a vertical DMOS structure specifically designed to be radiation tolerant, making them suitable for commercial and military space applications.
| Package Type | TO-205AF |
|---|
The devices meet pre-RAD specifications to 100K RAD (Si).
Yes, they feature enhanced immunity to Single Event Gate Rupture (SEGR).
The typical gate threshold voltage is -6.0 V.