The FDMS7656AS N-Channel PowerTrench® SyncFET™ is a low-power, high-efficiency MOSFET device with excellent switching performance. This device uses advanced silicon and package technologies to offer the lowest rDS(on) while maintaining excellent switching performance. It can be used in DC/DC converters, notebook Vcore/GPU low side switches, networking PoL low side switches, and telecom secondary side rectification applications.
The FDMS7656AS is an N-Channel PowerTrench SyncFET designed to minimize losses in power conversion applications. It combines advancements in silicon and package technologies to offer low on-resistance while maintaining excellent switching performance.
A key feature of this device is the efficient monolithic Schottky body diode, which exhibits characteristics similar to a discrete external Schottky diode connected in parallel with a MOSFET. The datasheet provides comprehensive electrical characteristics, typical performance graphs, and dimensional outlines for the Power 56 package.
| Drain to Source Voltage (VDS) | 30 V |
|---|---|
| Continuous Drain Current (Package limited) | 49 A |
| Continuous Drain Current (Silicon limited) | 19.4 A |
| Power Dissipation (Ta = 25°C) | 96 W |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction to Case) | 1.3 °C/W |
It is designed for synchronous rectification in DC/DC converters, notebook Vcore/GPU low side switching, networking point of load switches, and telecom secondary side rectification.
Yes, it features an efficient monolithic Schottky body diode.