The FDMS7572S N-Channel PowerTrench®SyncFET is a high efficiency, low power N-channel MOSFET with a maximum on-resistance of 2.9mΩ, a rated voltage of 25V, and a rated current of 49A. The device features advanced silicon and package technologies for excellent switching performance and low on-resistance.
The document is a technical datasheet for the FDMS7572S, an N-Channel PowerTrench SyncFET device designed to minimize losses in power conversion applications. It features an advanced package and silicon combination offering low on-resistance while maintaining excellent switching performance.
Key specifications include a maximum drain current of 49A (package limited) at 25°C, a drain-to-source breakdown voltage of 25V, and a static drain-to-source on-resistance ranging from 2.9 mΩ to 4.2 mΩ depending on test conditions. The device incorporates an efficient monolithic Schottky body diode suitable for synchronous rectifier applications.
| Drain to Source Voltage (VDS) | 25 V |
|---|---|
| Continuous Drain Current (Package limited) | 49 A |
| Static Drain to Source On Resistance (Typical) | 2.9 mΩ |
| Power Dissipation (Ta = 25°C) | 46 W |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
The device is designed for synchronous rectifiers in buck converters, notebooks, servers, telecom equipment, and high efficiency DC-DC switch mode power supplies.
Yes, it features an efficient monolithic Schottky body diode.