FDMS7580 N-Channel Power Trench® MOSFET is a high-performance MOSFET with a low on-resistance (7.5mΩ at VGS=10V,ID=15A) optimized for low gate charge, fast switching speed and soft recovery.
This document is a technical datasheet for the Fairchild Semiconductor FDMS7580, an N-Channel Power Trench MOSFET rated at 25V and 15A continuous drain current. The device features advanced package and silicon combinations designed to minimize switch node ringing in synchronous or conventional switching PWM controllers.
| Drain to Source Voltage (VDS) | 25 V |
|---|---|
| Continuous Drain Current (Package limited) | 15 A |
| Power Dissipation (Ta = 25°C) | 27 W |
| Static Drain to Source On Resistance (Vgs=10V, Id=15A) | 7.5 mQ |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
Yes, the document states that the product is RoHS Compliant.
The device supports a maximum continuous drain current of 15 A when the case temperature is 25°C.
The device operates and stores within a junction temperature range of -55 to +150 °C.
The device can handle a single pulse avalanche energy of 32 mJ.