This document describes the features of FDMS7560S N-Channel PowerTrench® SyncFETTM, including maximum on-resistance, advanced package and silicon combination, synchronous Schottky body diode, etc.
The FDMS7560S is an N-Channel PowerTrench SyncFET designed to minimize losses in power conversion applications. It features an advanced package and silicon combination for low on-resistance and high efficiency, along with a SyncFET Schottky body diode. The device is RoHS compliant and suitable for use in synchronous buck converters, notebooks, servers, telecom equipment, and high-efficiency DC-DC switch mode power supplies.
| Drain to Source Voltage | 25 V |
|---|---|
| Continuous Drain Current (Package limited) | 49 A |
| Continuous Drain Current (Silicon limited) | 181 A |
| Continuous Drain Current | 30 A |
| Power Dissipation (Ta = 25°C) | 25 W |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Case | 1.4 °C/W |
| Thermal Resistance, Junction to Ambient | 50 °C/W |
| Static Drain to Source On Resistance (Typical) | 1.45 mΩ |
| Gate to Source Threshold Voltage (Typical) | 1.7 V |