The FDMS7578 N-Channel Power Trench® MOSFET is a 25V, 5.8 mΩ power transistor. It features advanced packaging and silicon combination for low rDS(on) and high efficiency. Additionally, it utilizes next generation enhanced body diode technology for soft recovery. The product is specifically designed to improve the overall efficiency and minimize switch node ringing of DC/DC converters using synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low rDS(on), fast switching speed, and body diode reverse recovery performance.
The FDMS7578 is an N-Channel Power Trench MOSFET designed to improve efficiency and minimize switch node ringing in DC/DC converters. It features advanced package and silicon combinations for low on-resistance and fast switching speed, along with next-generation enhanced body diode technology for soft recovery applications. The device is optimized for use in notebook, server, and telecomm high-efficiency DC-DC switch mode power supplies.
Yes, the datasheet states that the device is RoHS Compliant.
The maximum single pulse avalanche energy is 40 mJ.