This datasheet mainly provides data of APT10078, including ratings, maximum values, minimum values, and test conditions.
This document is a datasheet for the Advanced Power Power MOS 7™ series, specifically the APT10078BLL and APT10078SLL models. These are N-Channel enhancement mode power MOSFETs designed with low loss and high voltage capabilities. The devices feature a patented metal gate structure to achieve exceptionally fast switching speeds and lower conduction and switching losses compared to previous generations.
| Drain-Source Voltage | 1000 Volts |
|---|---|
| Continuous Drain Current | 14 Amps |
| Pulsed Drain Current | 56 Amps |
| Total Power Dissipation | 400 Watts |
| Operating Junction Temperature Range | -55 to 150 C |
| Drain-Source On-State Resistance | 0.78 Ohms |
| Package Types | TO-247 or Surface Mount D°PAK |
The device supports a continuous drain current of 14 Amps when the temperature is 25°C.
The total power dissipation is rated for a maximum of 400 Watts at 25°C.
The device operates and stores within a junction temperature range of -55 to 150 C.