STP22NM60 is ST company's N-CHANNEL 600V - 0.19 Ω - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh™ Power MOSFET, with low input capacitance and gate charge, 100% avalanche tested, very suitable for increasing the power density of high voltage converters, enabling system miniaturization and higher efficiency.
This document presents advanced data for the STP22NM60 family of N-channel 600V - 0.19 Qg - 22A MDmesh™ Power MOSFETs. The product line includes models STP22NM60, STF22NM60, STB22NM60, STB22NM60-1, and STW22NM60.
The devices feature an improved version of the MDmesh™ technology based on a Multiple Drain process. Key characteristics include impressively high dv/dt capabilities, excellent avalanche performance (100% avalanche tested), low input capacitance, and low gate input resistance.
| Drain-source Voltage (V(BR)DSS) | 600 V |
|---|---|
| Continuous Drain Current at Tc = 25°C | 22 A |
| Static Drain-source On-Resistance | <0.252 Ohm |
| Maximum Operating Junction Temperature | 150 °C |
| Total Gate Charge (Typical) | 71 nC |
| Reverse Recovery Time (Typical) | 544 ns |
| Single Pulse Avalanche Energy (Max) | 650 mJ |
The typical static drain-source on-resistance (Rds(on)) is 0.19 Ohms.
Yes, the devices are 100% avalanche tested and exhibit excellent avalanche characteristics.
The maximum continuous drain current (Ip) at a case temperature of 25°C is 22 Amperes.