STMicroelectronics STD20N20/STF20N20/STP20N20 Datasheet

The STP20N20 STF20N20 - STD20N20 from STMicroelectronics is an N-channel 200V MOSFET with low gate charge and exceptional dv/dt capability. It is suitable as a primary switch in high-efficiency isolated DC-DC converters.


STMicroelectronics STD20N20/STF20N20/STP20N20 Datasheet - cover page
Brand
STMicroelectronics
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
13
File format
PDF
File size
341 KB
Published
07 August, 2012
Updated
28 September, 2023
MD5 checksum
5AD30FCBDB510CFACC1238EABB3C0423

About this manual

This document provides a technical overview of the STD20N20, STF20N20, and STP20N20 N-channel 200V MOSFETs. These devices utilize the unique STripFET process to minimize input capacitance and gate charge, making them suitable as primary switches in high-efficiency isolated DC-DC converters.

What's inside

  • General Features
  • Absolute Maximum Ratings
  • Thermal Data
  • Avalanche Characteristics
  • Electrical Characteristics
  • Safe Operating Area
  • Mechanical Data

Specifications

Continuous Drain Current (Tc = 25°C)18 A
Total Dissipation (TO-220/DPAK)90 W

Frequently asked questions

What is the maximum continuous drain current for these MOSFETs at a case temperature of 25°C?

The maximum continuous drain current is 18 A when the case temperature (Tc) is 25°C.

What are the typical static on-resistance and maximum drain-source breakdown voltage for this series?

The typical static on-resistance is 0.10 Ω, and the maximum drain-source breakdown voltage is 200 V.

What are the maximum thermal resistance values from junction to case for the TO-220 and DPAK packages?

The maximum thermal resistance from junction to case is 1.38 °C/W for both the TO-220 and DPAK packages.

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