IXYS manuals, page 14
IXYS
This document describes the features and characteristics of the IXTH 50P10 standard power MOSFET product from IXYS, including international standard package, low RDS(on) value, rugged polysilicon gate cell structure, avalanche rated, and low package inductance. This product is suitable for applications such as high side switching, push-pull amplifiers, DC choppers, and automatic test equipment, and it offers advantages such as easy mounting, space savings, and high power density.
IXYS IXTH IXTM 5N100 IXTH IXTM 5N100A handbook
5N100 and 5N100A are N-channel enhancement mode standard power MOSFETs from IXYS. The products have international standard packages, low RON, high reliability and other characteristics. They are suitable for switch-mode and resonant-mode power supplies, motor controls, uninterruptible power supplies (UPS) and DC choppers.
IXYS IXTN 58N50 IXTN 61N50 handbook
This document introduces the high current power MOSFET products from IXYS. The features of the products include international standard package, 3000V isolation voltage, low RDS (on), rugged polysilicon gate cell structure, low drain-to-case capacitance, and low package inductance. The products are suitable for various applications.
IXYS IXTH 13N110 handbook
IXYS IXTH 12N90/IXTM 12N90 handbook
IXTH 12N90 is a TO-247 packaged N-channel enhancement mode MOSFET with a maximum voltage of 900V and a maximum current of 12A. It has a fast switching time and is suitable for applications such as switch-mode power supplies and inverters.
IXYS IXTQ 110N055P/IXTA 110N055P/IXTP 110N055P handbook
This document is the datasheet of IXTQ 110N055P, which mainly introduces the maximum voltage, rated current, drain current, gate-source voltage, drain-source voltage, gate-source current, and drain-source resistance of the product.
IXYS IXTQ 180N055T/IXTA 180N055T/IXTP 180N055T handbook
This document describes the features and characteristics of the N-Channel Enhancement Mode power MOSFET product produced by IXYS in 2005, including international standard packages, unclamped inductive switching (UIS) rating, and low package inductance. The product is easy to mount, saves space, and has high power density.
IXYS IXTA 1N100 IXTP 1N100 Manual
This document describes the features and characteristics of the N-Channel Enhancement Mode MOSFET products produced by IXYS, including high voltage, low RDS(on), rugged polysilicon gate cell structure, and fast switching times. The product is suitable for applications such as switch-mode and resonant-mode power supplies, flyback inverters, DC choppers, and high frequency matching.
IXYS IXTA 2N80 IXTP 2N80 Manual
IXTA is a high voltage MOSFET produced by IXYS company. It has the characteristics of low RDS(on), high reliability and low package inductance. It is suitable for applications such as switch-mode power supplies and inverters.
IXYS IXTA/IXTP 3N120 IXTA/IXTP 3N110 handbook
IXTA/IXTP 3N120 and 3N110 are high voltage power MOSFETs from IXYS. They have international standard packages, low RDS(on), unclamped Inductive load Switching (UIS) rated values and UL 94 V-0 flammability classification advantages.
IXYS IXTA 5N50P/IXTP 5N50P/IXTY 5N50P Manual
5N50P is a N-channel enhancement mode MOSFET produced by IXYS. Its features are international standard packages, unclamped inductive switching (UIS) rated, low package inductance, easy to drive and protect, and easy to install, space saving and high power density.
IXYS IXTQ 75N10P IXTA 75N10P IXTP 75N10P handbook
This document introduces the features and characteristics of PolarHTTM Power MOSFET N-Channel Enhancement Mode, including international standard packages, unclamped inductive switching (UIS) rated, and low package inductance.
IXYS IXTC 26N50P Manual
This document describes the features and characteristics of a power MOSFET product produced by IXYS, including high power dissipation, isolated mounting surface, and 2500V electrical isolation.
IXYS IXTH IXTM 11N80 IXTH IXTM 13N80 handbook
This document describes the features and characteristics of the MegaMOSTMFET N-Channel Enhancement Mode products produced by IXYS Corporation, including international standard packages, low RDS (on), HDMOSTM process, rugged polysilicon gate cell structure, and low package inductance.
IXYS IXTH/IXTT 10P50 IXTH/IXTT 11P50 handbook
This is the datasheet of IXYS's 10P50 and 11P50 standard power MOSFET devices. The device has international standard packages, low RDS(on) HDMOSTM process, rugged polysilicon gate cell structure, unclamped inductive switching (UIS) rated, low package inductance, easy to drive and protect.