IXYS manuals, page 9
IXYS IXFH 52N30Q IXFK 52N30Q IXFT 52N30Q handbook
This data sheet lists the characteristic values of HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances.
IXYS IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 handbook
This document introduces the HiPerFETTM power MOSFET series from IXYS. These products are N-channel enhancement mode high dv/dt, low trr, HDMOSTM family. The features include international standard packages, low RDS(on), rugged polysilicon gate cell structure, unclamped inductive switching (UIS) rated, low package inductance - easy to drive and protect, fast intrinsic rectifier, etc. They are suitable for applications such as DC-DC converters, synchronous rectification, battery chargers, switched-mode and resonant-mode power supplies, DC choppers, etc.
IXYS IXFH 22N55 handbook
This is the datasheet for IXFH 22 N55, which is a N-channel enhancement mode avalanche rated, high dv/dt, low trr power MOSFET. Its maximum voltage is 550 V, continuous current is 22 A, and switching time is 250 ns.
IXYS IXFH 26N50P IXFV 26N50P IXFV 26N50PS handbook
26N50P is a N-channel MOSFET produced by IXYS. It has a maximum current of 26A, a minimum on-resistance of 230mΩ, and a maximum voltage of 500V.
IXYS IXFH/IXFT 24N50Q IXFH/IXFT 26N50Q handbook
IXFH/IXFT 24N50Q and 26N50Q are N-channel enhancement mode Avalanche Rated, Low Qg, High dv/dt power MOSFETs manufactured by IXYS.
IXYS IXFH 26N60/IXFT 26N60/IXFK 28N60 handbook
IXFH/IXFT IXFK are IXYS company's N-channel enhancement mode high dv/dt, low trr 600V power MOSFETs, with a maximum voltage of 600V and a maximum current of 26A/28A. It has a fast switching speed (trr is 250ns), and can be used in motor drives, switch power supplies and other applications.
IXYS IXFH 26N60Q IXFT 26N60Q handbook
This document is the datasheet of IXFH 26N60Q, introducing the features and characteristics of this product, including maximum ratings, characteristic values, package form, etc.
IXYS IXFH 28N50F IXFT 28N50F handbook
This document is a technical information document about IXYS' HiPerRFTM Power MOSFETs F-Class product. This product is a N-channel enhancement type avalanche rated, low Qg, low intrinsic Rg, high dV/dt, low trr RF power MOSFET.
IXYS IXFH16N90 XFX16N90 handbook
The document describes the features and characteristics of a product, including its performance, functions, etc.
IXYS IXFH 16N90Q IXFK 16N90Q IXFT 16N90Q handbook
This document mainly introduces the features and characteristics of IXYS's Q-Class N-channel enhancement mode avalanche rated low Qg, high dv/dt power MOSFET products, including maximum ratings, characteristic values, packaging, installation dimensions, and typical application circuits.
IXYS IXFH20N80Q IXFK20N80Q IXFT20N80Q handbook
IXFH20N80Q and IXFK20N80Q are IXYS's N-channel enhancement mode avalanche rated, low Qg, high dv/dt power MOSFETs. The main features are low RDS (on) low Qg, avalanche energy and current rated, fast intrinsic rectifier, easy to mount, space saving, high power density.
IXYS IXFH 21N50Q IXFT 21N50Q handbook
This datasheet lists the maximum ratings, characteristic values, etc. of the IXFH type MOSFET device.
IXYS IXFH 13N80Q IXFT 13N80Q handbook
IXFH 13N80 is a N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Power MOSFET
IXYS IXFH 140N10P IXFT 140N10P handbook
IXFH 140N10P is a N-Channel Enhancement Mode Fast Intrinsic Diode, Avalanche Rated from IXYS with Unclamped Inductive Switching (UIS) rated, Low package inductance - easy to drive and to protect.
IXYS IXFH/IXFT/IXFX14N100 IXFH/IXFT/IXFX15N100 handbook
The document describes the features and characteristics of IXYS' N-channel enhancement mode MOSFET products, including maximum ratings, maximum operating temperature, maximum current, etc.