IXYS manuals, page 12
IXYS IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS handbook
30N60P is a N-channel enhancement mode avalanche rated power MOSFET produced by IXYS. Its maximum voltage is 600V, the maximum current is 30A, and the on-resistance is less than 240mΩ. The product has the characteristics of fast recovery diode, unclamped inductive switching (UIS) rating, international standard packages, and low package inductance.
IXYS IXTQ 36N50P/IXTT 36N50P Manual
This document describes the features and characteristics of the PolarHVTM Power MOSFET IXTQ 36N50P produced by IXYS, including international standard packages, Unclamped Inductive Switching (UIS) rating, low package inductance, etc.
IXYS IXTQ 64N25P/IXTT 64N25P Manual
IXTQ 64N25P is a N-channel enhancement mode power MOSFET from IXYS. Its maximum rated voltage is 250V, maximum current is 64A, and typical RDS(on) is 48mΩ.
IXYS IXTQ 69N30P IXTT 69N30P handbook
IXTQ 69N30P is a N-Channel Enhancement Mode Power MOSFET with VDSS = 300 V, ID25 = 69 A and RDS(on) = 49 mΩ. It features international standard packages, unclamped inductive switching (UIS) rating and low package inductance.
IXYS IXTU 01N100 IXTY 01N100 handbook
01N100 is a high voltage MOSFET produced by IXYS. Its features are international standard package JEDEC TO-251 AA, low RDS(on), rugged polysilicon gate cell structure and fast switching times.
IXYS IXTN36N50 handbook
IXYS IXTP 01N100D handbook
The document describes symbol test conditions and maximum ratings, as well as the features and characteristics of a high voltage MOSFET device.
IXYS IXTP 1R6N50P/IXTY 1R6N50P Manual
IXTP 1R6N50P is a N-Channel Enhancement Mode power MOSFET produced by IXYS. Its main features include international standard packaging, unclamped inductive switching (UIS) rating, low package inductance, easy to drive and protect.
IXYS IXTQ 110N10P IXTT 110N10P handbook
This is a N-Channel Enhancement Mode MOSFET with a maximum voltage of 100V and a maximum current of 110A. Its typical impedance is 15 mΩ.
IXYS IXTH 20N60 handbook
IXYS IXTH IXTM 6N90A handbook
The document describes the N-channel enhancement mode power MOSFETs of TO-204 AA (IXTM) and TO-247 AD (IXTH) models produced by IXYS. The products feature low RDS(on), rugged polysilicon gate cell structure, and low package inductance. They are suitable for switch-mode and resonant-mode power supplies, motor controls, uninterruptible power supplies, and DC choppers, among other applications.
IXYS IXTT 11P50 handbook
This datasheet provides specifications of IXTH11P50N, including maximum ratings, characteristic values, characteristic curves, package and pin diagram, etc.
IXYS IXTH 8P50 handbook
This data sheet provides the maximum ratings, characteristics, characteristics, applications and advantages of the 7P50 and 8P50 P-channel enhancement type avalanche rated standard power MOSFET.
IXYS IXTK 120N25 handbook
This is a technical document about IXTK 120N25 VDSS = 250 V ID25 = 120 A product, which introduces the features and characteristics of the product, including low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure, international standard package, fast switching time, etc.
IXYS IXTK 140N20P Manual
IXTK 140N20P is a high performance N-channel enhancement mode power MOSFET. It has a maximum voltage of 200V and a maximum current of 140A. It has international standard packages, unclamped inductive switching (UIS) rating, low package inductance, etc., easy to drive and protect.