IXYS manuals, page 13
IXYS IXTK 180N15 handbook
This datasheet is about IXTK 180N15's technical parameters, including maximum voltage, maximum current, minimum resistance.
IXYS IXTK 21N100/IXTN 21N100 Manual
This document describes the features and characteristics of IXYS' IXTK and IXTN series N-channel enhancement mode MOSFET products.
IXYS IXTK 250N10 Manual
This document is about the technical information of IXYS products, including the features and performance parameters. The product adopts low RDS (on) HDMOSTM process and has a rugged polysilicon gate cell structure. It is suitable for applications such as motor controls, DC choppers, switched-mode power supplies, DC-DC converters, and linear regulators.
IXYS IXTK 33N50 handbook
IXTK 33N50 is a high current N-channel enhancement mode MOSFET from IXYS. It has a maximum drain-source voltage of 500V and a maximum continuous drain current of 33A. It has fast switching speeds and is used in motor controls, DC choppers, uninterruptible power supplies (UPS), switch-mode and resonant-mode power supplies.
IXYS IXTK 62N25 Manual
IXTK 62N25 is a high current N-channel enhancement mode MOSFET with low RDS(on), rugged polysilicon gate cell structure, international standard package, fast switching time, etc. It is suitable for motor control, DC chopper, switched-mode power supply and other applications.
IXYS IXTQ 82N25P handbook
IXTQ 82N25P is a N-Channel Enhancement Mode Power MOSFET from IXYS. It features international standard packages, unclamped inductive switching (UIS) rating, low package inductance and easy driving and protection.
IXYS IXTH/IXTM 6 N80A handbook
ixth/ixtm 6 n80/6 n80a is a power mosfet produced by ixys, which has the characteristics of low rds(on), hdmostm process, rugged polysilicon gate cell structure, low package inductance (<5 nH)
IXYS IXTH14N100 Manual
This document describes the features and characteristics of IXYS' N-channel enhancement mode MegaMOSTMFET product, including maximum ratings, test conditions, and characteristic values.
IXYS IXTH 15N70 handbook
The document describes the features and characteristics of IXYS Corporation's MegaMOSTMFET N-Channel Enhancement Mode Power MOSFET. This MOSFET has a maximum voltage rating of 700V, maximum current of 15A, an on-state resistance of 0.45Ω, and low RDS(on) value. It is suitable for applications such as switch-mode and resonant-mode power supplies, motor controls, and uninterruptible power supplies.
IXYS IXTH 16P20 Manual
The document introduces a P-Channel Enhancement Mode Avalanche Rated Standard Power MOSFET (IXTH 16P20) from IXYS. It features an international standard package, low RDS(on), rugged polysilicon gate cell structure, and unclamped inductive switching (UIS) capability.
IXYS IXTH IXTM 21N50 handbook
IXTH / IXTM 21N50 and 24N50 are IXYS's MegaMOSTMFET N-channel enhancement mode MOSFETs with a maximum voltage of 500 V, a maximum current of 21 A and 24 A, and a maximum power of 300 W.
IXYS IXTH 30N50 handbook
The document describes the features and characteristics of the product, IXTH 30N50.
IXYS IXTH 24P20 handbook
This document is a specification sheet for a standard power MOSFET product produced by IXYS. The product is a P-channel enhancement mode MOSFET with a voltage rating of 200V, a current rating of 24A, and an on-resistance of 0.15Ω. Its features include international standard package, low on-resistance, ruggedness, easy to drive and protect, etc. It is suitable for applications such as high side switching, push-pull amplifiers, DC choppers, and automatic test equipment.
IXYS IXTH 35N30/IXTH 40N30/IXTM 40N30 Manual
IXTH 35N30/40N30/40N30 MegaMOSTMFET N-Channel Enhancement Mode power MOSFET devices, with a maximum operating voltage of 300V, a maximum current of 35A/40A/40A, and a fast switching time, are used in switch-mode power supplies, inverters, motor drives and other fields.
IXYS IXTH 50N20/IXTM 50N20 Manual
The document describes the features and characteristics of the MegaMOSTMFET N-Channel Enhancement Mode product from IXYS, including international standard packages, low on-resistance, rugged polysilicon gate cell structure, low package inductance, and fast switching times. The product is suitable for switch-mode and resonant-mode power supplies, motor controls, uninterruptible power supplies (UPS), and DC choppers.