IXYS manuals, page 11
IXYS IXFC 80N10 handbook
The document describes a N-Channel Enhancement Mode HiPerFETTM MOSFET product from IXYS. This product belongs to the HDMOSTM family and features high dv/dt, low trr. It uses a silicon chip on a Direct-Copper-Bond substrate, which allows for high power dissipation, isolated mounting surface, and 2500V electrical isolation. Additionally, the product has low drain to tab capacitance (<35pF), low RDS (on), and a rugged polysilicon gate cell structure.
IXYS IXFE 44N60 handbook
This product is a N-channel enhancement mode avalanche rated, high dv/dt, low trr single die MOSFET with low RDS(on), HDMOSTM process, rugged polysilicon gate cell structure, unclamped inductive switching (UIS) rated, low package inductance and fast intrinsic rectifier features.
IXYS IXFE44N50QD2 IXFE44N50QD3 IXFE48N50QD2 IXFE48N50QD3 handbook
IXYS IXFE 80N50 handbook
IXFE 80N50 is a low RDS(on) and high dv/dt N-Channel Enhancement Mode Avalanche Rated Power MOSFET. It features low RDS(on), rugged polysilicon gate cell structure, UIS rated, low package inductance and fast intrinsic rectifier.
IXYS IXFF 24N100 handbook
IXYS IXFH 6N100F IXFT 6N100F handbook
The document describes the features and characteristics of IXYS products, including RF capability, low gate resistance, shock resistance, low package inductance, and fast intrinsic rectifier. It is suitable for applications such as DC-DC converters, switched-mode power supplies, pulse generators, laser drivers, and RF amplifiers.
IXYS IXGH24N50B IXGH24N60B datasheet
IXGH24N50B/24N60B is a high frequency IGBT produced by IXYS, with high current handling capability, high power density, high switching speed and other characteristics, suitable for AC motor speed control, DC servo and robot drive, DC chopper, uninterruptible power supply, switched mode and resonant mode power supply etc.
IXYS DE375-501N21A Data Sheet
DE375-501N21A RF Power MOSFET is a RF power MOSFET produced by IXYS. Its maximum ratings are VDSS = 500 V, ID25 = 25 A, RDS(on) = 0.22 Ω, and PDC = 940 W. Its features are high isolation voltage (>2500V), excellent thermal transfer, increased temperature and power cycling capability, low gate charge and capacitance, easier to drive, faster switching, low RDS(on), very low insertion inductance (<2nH), and no beryllium oxide (BeO) or other hazardous materials.
IXYS IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 HiPerFET Power MOSFETs
21N50, 24N50, 26N50 are IXYS's N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family series products, with low RDS(on) HDMOSTM process, rugged polysilicon gate cell structure, unclamped inductive switching (UIS) rated, low package inductance-easy to drive and protect, fast intrinsic rectifier etc.
IXYS DSS 25-0025B handbook
DSS 25-0025B is a Schottky rectifier produced by IXYS. It has an international standard package, very low VF, extremely low switching losses, low IRM values, epoxy meets UL 94V-0. Applications include rectifiers in switch mode power supplies (SMPS) and free wheeling diodes in low voltage converters.
IXYS IXGH20N30 handbook
the ixys IXGH20N30 is a high power density and high switching speed igbt, suitable for ac motor speed control, dc servo and robot drives, dc choppers, ups, switched-mode and resonant-mode power supplies.
IXYS VVZ 24 Data Sheet
IXYS VUO 105 Data Sheet
This document is the datasheet of IXYS VUO 105-12NO7 1200V 140A bridge rectifier. It mainly introduces the features and characteristics of the product, including maximum current, rated voltage, package type, impedance, rated current, etc.
IXYS IXSH 30N60BD1 Data Sheet
This data sheet provides the characteristics parameters of IXYS IXSH series 600V IGBT.
IXYS IXTU 01N80/IXTY 01N80 Manual
IXTU01N80 is a high voltage MOSFET produced by IXYS company. Its features are international standard JEDEC TO-251 AA, TO-252 AA packages, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure and fast switching times.