Fairchild manuals, page 68
FAIRCHILD MMBFJ305 N-Channel RF Amplifier Manual
MMBFJ305 is an N-Channel RF amplifier designed for electronic switching applications, with low On Resistance analog switching.
FAIRCHILD J309/J310/MMBFJ309/MMBFJ310 N-Channel RF Amplifier Manual
J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier is a device designed for VHF/UHF amplifier, oscillator and mixer applications.
FAIRCHILD PF5102 N-Channel Switch Manual
The PF5102 N-Channel Switch is a low-level analog switch designed for use in sample and hold circuits and chopper stabilized amplifiers.
FAIRCHILD BC516 PNP Darlington Transistor Manual
BC516 is a PNP Darlington transistor produced by Fairchild Semiconductor Corporation. Rated voltage is 30V, rated current is 1A, maximum working temperature is 150°C.
FAIRCHILD BC517 NPN Darlington Transistor Manual
The BC517 is an NPN Darlington transistor designed for applications requiring extremely high current gain up to 1.0A.
FAIRCHILD BCV26 PNP Darlington Transistor Manual
The BCV26 is a PNP Darlington transistor from Fairchild Semiconductor Corporation. This device is designed for applications requiring extremely high current gain at currents to 800 mA.
FAIRCHILD BCV27 NPN Darlington Transistor Manual
This document describes the features and characteristics of the BCV27 NPN Darlington transistor, designed for applications requiring extremely high current gain with a maximum collector current of 1.0A.
FAIRCHILD BSP50 NPN Darlington Transistor Manual
BSP50 is a NPN transistor produced by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is 45V, maximum collector-base voltage is 60V, maximum emitter-base voltage is 5V, maximum collector current is 800mA and maximum operating temperature is 150 °C.
FAIRCHILD BSP52 NPN Darlington Transistor Manual
BSP52 NPN is a bipolar transistor produced by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is 80V, maximum collector-base voltage is 90V, maximum emitter-base voltage is 5V, maximum collector current is 800mA, and operating and storage temperature range is -55~+150°C.
FAIRCHILD KSH122 NPN Silicon Darlington Transistor Manual
This document presents the absolute maximum ratings and electrical characteristics of the KSH122 NPN Silicon Darlington Transistor. The transistor features high DC current gain, is suitable for surface mount applications, and has a built-in damper diode at E-C.
FAIRCHILD KSP13/14 NPN Epitaxial Silicon Darlington Transistor Manual
This document provides the absolute maximum ratings and electrical characteristics of the KSP13/14 NPN Epitaxial Silicon Darlington Transistor produced by Fairchild Semiconductor Corporation.
FAIRCHILD KST13/14 NPN Epitaxial Silicon Transistor Manual
This document introduces the absolute maximum ratings and electrical characteristics of the KST13/14 NPN epitaxial silicon transistor from Fairchild Semiconductor Corporation. It includes the maximum rated values and characteristic parameters of the transistor, such as collector-base voltage, collector-emitter voltage, emitter-base voltage, and collector current. In addition, packaging information and some typical characteristic curves of the transistor are provided.
FAIRCHILD 2N6427/MMBT6427 NPN Darlington Transistor Manual
FAIRCHILD MMBTA13 NPN Darlington Transistor Manual
The MMBTA13 NPN Darlington transistor is designed for applications requiring extremely high current gain at collector currents to 1.0A.
FAIRCHILD MPSA63/MMBTA63/PZTA63 PNP Darlington Transistor Manual
The MPSA63 / MMBTA63 / PZTA63 is a PNP Darlington transistor manufactured by Fairchild Semiconductor Corporation. This device has extremely high current gain and can be used in applications up to 800mA.