Fairchild manuals, page 73
FAIRCHILD KSC5019 NPN Epitaxial Silicon Transistor handbook
KSC5019 is a low saturation NPN silicon transistor with a maximum collector-emitter saturation voltage of 0.5V and a maximum collector-emitter breakdown voltage of 10V.
FAIRCHILD KSC815 NPN Epitaxial Silicon Transistor handbook
KSC815 is a NPN epitaxial silicon transistor produced by Fairchild Semiconductor Corporation. Its package is TO-92, with a rated power of 400mW and a rated voltage of 60V. The transistor has the function of low frequency amplifier and high frequency oscillator.
FAIRCHILD KSC945 NPN Epitaxial Silicon Transistor handbook
The KSC945 is a NPN Epitaxial Silicon Transistor produced by Fairchild Semiconductor Corporation. Its maximum collector-base reverse voltage is 60V, collector-emitter maximum voltage is 50V, emitter-base maximum voltage is 5V, maximum collector current is 150mA, maximum collector power dissipation is 250mW, maximum junction temperature is 150℃, and storage temperature range is -55~150℃.
FAIRCHILD KSD261 NPN Epitaxial Silicon Transistor Manual
KSD261 is an NPN type integrated circuit produced by Fairchild Semiconductor Corporation. Its maximum collector current is 500mA, maximum collector-emitter voltage is 20V, maximum emitter-base voltage is 5V, maximum collector-base voltage is 40V.
FAIRCHILD KSD5041 NPN Epitaxial Silicon Transistor Manual
This is a technical document about KSD5041, an NPN Epitaxial Silicon Transistor with low VCE (sat) and high performance.
FAIRCHILD KSH44H11 NPN Epitaxial Silicon Transistor Manual
This document describes the absolute maximum ratings and electrical characteristics of the KSH44H11 NPN epitaxial silicon transistor. The transistor features a collector-emitter voltage of 80V, a collector current of 8A, and a collector dissipation of 1.75W.
FAIRCHILD KSP05/06 PNP Epitaxial Silicon Transistor Manual
This document provides information on the absolute maximum ratings and electrical characteristics of the KSP05/06 NPN Epitaxial Silicon Transistor from Fairchild Semiconductor Corporation. The transistor has high voltage and power dissipation capabilities and is a complement to the KSP55/56.
FAIRCHILD KSD1616/1616A NPN Epitaxial Silicon Transistor Manual
The KSD1616/1616A is an audio frequency power amplifier and medium speed switching device, with a rated voltage of 60V and 120V and a rated current of 1A and 2A.
FAIRCHILD KSP2222A NPN Epitaxial Silicon Transistor Manual
This document is a datasheet for the KSP2222A NPN General Purpose Amplifier. The features of this product include a collector-emitter voltage of 40V and a collector power dissipation of 625mW.
FAIRCHILD KSP2907A PNP Epitaxial Silicon Transistor Manual
KSP2907A is a PNP general purpose amplifier produced by Fairchild Semiconductor Corporation. Its characteristics are collector-emitter voltage VCEO= 60V, collector power dissipation PC (max)=625mW. The chip has two packages with and without “-C”. The package with “-C” is the center collector and the package without “-C” is the side collector. The chip's model is PN2907A.
FAIRCHILD KSP42/43 NPN Epitaxial Silicon Transistor Manual
KSP42/43 is a NPN type high voltage transistor produced by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is 300V and its maximum collector-emitter power dissipation is 625mW.
FAIRCHILD KSP44/45 NPN Epitaxial Silicon Transistor Manual
KSP44/45 is a high voltage transistor produced by Fairchild Semiconductor Corporation. The maximum collector-emitter voltage is 400V, the maximum collector-base voltage is 500V, and the maximum emitter-base voltage is 6V.
FAIRCHILD KSP55/56 PNP Epitaxial Silicon Transistor Manual
This document presents the absolute maximum ratings and electrical characteristics of the KSP55/56 PNP Epitaxial Silicon Transistors produced by Fairchild Semiconductor Corporation. It includes the maximum voltage, current, power dissipation, temperature ratings of the device, as well as the breakdown voltage of collector-emitter, breakdown voltage of emitter-base, collector cut-off current, collector-emitter saturation voltage, base-emitter on voltage, current gain bandwidth, and other electrical characteristics.
FAIRCHILD KSP92/93 PNP Epitaxial Silicon Transistor Manual
This datasheet provides the specifications of KSP92/93, including voltage, current, power, temperature, etc.
FAIRCHILD KSP94 PNP Epitaxial Silicon Transistor Manual
The KSP94 is a high voltage PNP type transistor manufactured by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is -400V, maximum collector-base voltage is -400V, maximum emitter-base voltage is -6V, maximum collector current is -300mA, maximum collector power dissipation is 625mW, maximum junction temperature is 150°C, and maximum storage temperature is -55~150°C.