Fairchild manuals, page 155
FAIRCHILD FDB14N30 Manual
FAIRCHILD FDB150N10 Manual
This document describes the Fairchild Semiconductor Corporation's FDB150N10 N-Channel PowerTrench® MOSFET. The product has a rated voltage of 100V, a rated current of 57A, and an on-state resistance of 15mΩ. It is produced using advanced PowerTrench process to achieve lower on-state resistance and superior switching performance. It is suitable for applications such as DC to DC converters and synchronous rectification.
FAIRCHILD FDH15N50 FDP15N50 FDB15N50 Manual
This document describes the features and characteristics of the FDH15N50 / FDP15N50 / FDB15N50 products, which are suitable for switch mode power supplies (SMPS). The products have features such as low gate charge, improved gate, avalanche and high reapplied dv/dt ruggedness, reduced rDS(ON), reduced Miller capacitance and low input capacitance, improved switching speed with low EMI, and a rated junction temperature of 175°C.
FAIRCHILD FDB2532 FDP2532 FDI2532 Manual
FDB2532 / FDP2532 / FDI2532 N-Channel PowerTrench® MOSFET 150V, 79A, 16mΩ is a low-resistance power MOSFET produced by Fairchild Semiconductor Corporation. It has low Miller charge, low QRR body diode, UIS capability (single pulse and repetitive pulse) and other features.
FAIRCHILD FDB2552 FDP2552 Manual
FDB2552 / FDP2552 is a N-Channel PowerTrench® MOSFET with 150V, 37A and 36mΩ features. It features low Miller charge, low QRR body diode and UIS capability (single pulse and repetitive pulse).
FAIRCHILD FDB2572 FDP2572 Manual
This document describes the features and characteristics of the N-Channel PowerTrench® MOSFET 150V, 29A, 54mΩ product manufactured by Fairchild Semiconductor Corporation.
FAIRCHILD FCA16N60N Manual
FCA16N60N N-Channel MOSFET is a high performance product from Fairchild Semiconductor Corporation. This product uses an advanced deep trench filling process and has ultra-low RDS(on), ultra-low gate charge, low effective output capacitance and other features.
FAIRCHILD FCA20N60F Manual
This document describes the features and characteristics of Fairchild Semiconductor Corporation's FCA20N60F 600V N-CHANNEL FRFET product, including 650V operating voltage, low on-resistance, fast recovery type, ultra low gate charge, low effective output capacitance, etc.
FAIRCHILD FCA22N60N Manual
FAIRCHILD FCA35N60 Manual
FCA35N60 600V N-Channel MOSFET is a new generation of high voltage MOSFET family developed by Fairchild Corporation. It has a maximum breakdown voltage of 650V, a low on-resistance of 0.079Ω and a low output capacitance of 340pF.
FAIRCHILD FCA36N60NF Manual
This document describes the features and characteristics of the FCA36N60NF N-Channel MOSFET, FRFET product, including its low on-resistance, ultra-low gate charge, low output capacitance, 100% avalanche tested, etc. This product is suitable for AC-DC SMPS, PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
FAIRCHILD FCA47N60/FCA47N60_F109 Manual
FCH47N60_F133 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET is a high performance MOSFET device from Fairchild with outstanding low on-resistance, ultra low gate charge and high voltage capability. This device is very suitable for various AC/DC power conversion applications for system miniaturization and higher efficiency.
FAIRCHILD FCA47N60F Manual
FCA47N60F 600V N-Channel MOSFET, FRFET is a high performance new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance, suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
FAIRCHILD FCA76N60N Manual
FCA76N60N N-Channel MOSFET, is Fairchild's next generation of high voltage super-junction MOSFETs, employing a deep trench filling process that differentiates it from preceding multi-epi based technologies. This product provides world class Rsp, superior switching performance and ruggedness.
FAIRCHILD FCB11N60 Manual
The document describes the features and characteristics of the FCB11N60 600V N-Channel MOSFET produced by Fairchild Semiconductor Corporation, including 650V voltage, 0.32Ω RDS(on), 40nC ultra-low gate charge, and 95pF low effective output capacitance.