Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits
The document is a technical specification sheet for the Analog Power AM20N10-350D, an N-channel MOSFET with a drain-source voltage rating of 100V. It highlights key features such as low on-resistance (rDS(on)) trench technology, low thermal impedance, and fast switching speed.
| Drain-Source Voltage | 100 V |
|---|---|
| Continuous Drain Current (Ta=25°C) | 9.0 A |
| Power Dissipation (Ta=25°C) | 50 W |
| Operating Junction Temperature Range | -55 to 175 °C |
| Maximum Junction-to-Ambient Thermal Resistance | 40 °C/W |
The device can dissipate a maximum of 50 W when the ambient temperature (Ta) is 25°C.
The device operates within a junction and storage temperature range of -55 to 175 °C.