These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers,printers, and cordless telephones.
The document describes the Analog Power AM20N10-180D, a miniature surface mount N-channel MOSFET utilizing high cell density trench technology. It is designed for low on-resistance and minimal power loss, making it suitable for DC-DC converters and power management in portable devices like computers and cordless telephones.
The datasheet details absolute maximum ratings such as a drain-source voltage of 100 V and continuous drain current of 14 A. It also lists specific electrical specifications including gate-threshold voltage, on-state resistance, and switching times under standard test conditions.
| Drain-Source Voltage (Vos) | 100 V |
|---|---|
| Gate-Source Voltage (Vgs) | -20 V |
| Power Dissipation (Pd) | 50 W |
| Operating Junction Temperature Range | -55 to 175 °C |
It is designed for use in DC-DC converters and power management within portable and battery-powered products such as computers, printers, and cordless telephones.
The maximum continuous drain current is 14 A when the case temperature is 25°C.
The maximum power dissipation is 50 W when the case temperature is 25°C.