These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers,printers, and cordless telephones.
The document describes the Analog Power AM20N10-250DE, an N-channel 100-V (D-S) MOSFET utilizing a high cell density trench process. It is designed for low rDS(on) to ensure minimal power loss and heat dissipation in DC-DC converters and power management applications.
| Drain-Source Voltage | 100 V |
|---|---|
| Continuous Drain Current | 11 A |
| Power Dissipation | 50 W |
| Operating Junction and Storage Temperature Range | -55 to 175 °C |
| Maximum Junction-to-Ambient Thermal Resistance | 50 °C/W |
This device is intended for use in DC-DC converters and power management within portable products like computers, printers, and cordless telephones.
The device supports a continuous drain current of 11 A when the temperature is 25°C.
The MOSFET has a maximum power dissipation of 50 W at an ambient temperature of 25°C.