Analog Power AM20N10-250D MOSFET Datasheet

Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost converters


Analog Power AM20N10-250D MOSFET Datasheet - cover page
Brand
Analog Power
Category
MOSFET
Document type
Datasheet
Language
English
Pages
6
File format
PDF
File size
300 KB
Published
19 March, 2014
Updated
25 September, 2023
MD5 checksum
6155618138001ED75345A834031C5DB1

About this manual

The Analog Power AM20N10-250D is an N-Channel 100-V MOSFET featuring low rDS(on) trench technology and fast switching speed. It is designed for applications such as PoE power sourcing equipment, PoE powered devices, telecom DC/DC converters, and white LED boost converters. The device operates with a maximum junction temperature of 175°C and is available in a To-252 package.

What's inside

  • Key Features
  • Typical Applications
  • Absolute Maximum Ratings
  • Thermal Resistance Ratings
  • Typical Electrical Characteristics
  • Package Information

Specifications

Drain-Source Voltage100 V
Continuous Drain Current11 A
Power Dissipation50 W
Operating Junction Temperature Range-55 to 175 °C
Maximum Junction-to-Ambient Thermal Resistance40 °C/W
On-State Drain Current34 A
Drain-Source On-Resistance355 mΩ

Frequently asked questions

What are the typical applications for the AM20N10-250D?

The device is suitable for PoE Power Sourcing Equipment, PoE Powered Devices, Telecom DC/DC converters, and White LED boost converters.

What is the maximum junction temperature?

The maximum operating junction and storage temperature range is from -55 to 175 °C.

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