M29W160ET M29W160EB 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory provides 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory. It has a supply voltage of 2.7V to 3.6V, 70, 90ns access time, 10µs per byte/word typical programming time, 35 memory blocks, 1 boot block (top or bottom location), 2 parameters and 32 main blocks, embedded byte/word programming algorithms of the program/erase controller, erase suspend and resume modes (reading and programming another block during erase suspend), unlock bypass programming command (faster production/batch programming), temporary block unprotected mode, 64-bit security code of common flash interface, standby and automatic standby, 100,000 program/erase cycles/block, electronic signature manufacturer code: 0020h, top device code M29W160ET: 22C4h, bottom device code M29W160EB: 2249h.
The M29W160ET/EB flash memories provide 16 Mbit capacity (2 Mb × 8 or 1 Mb × 16) and operate from a 2.7 V to 3.6 V supply. They feature a boot block, two parameter blocks and multiple main blocks that can be erased and protected independently. The devices support standard JEDEC command sets and include an on‑chip program/erase controller with erase‑suspend and resume modes.
Two package options are offered: a 48‑lead TSOP (12 × 20 mm) and a 48‑ball TFBGA (6 × 8 mm). The parts are supplied fully erased and meet a 100 000 program/erase cycle endurance per block, making them suitable for a wide range of embedded applications.
| Supply Voltage | 2.7 V to 3.6 V |
|---|---|
| Access Times | 70 ns, 90 ns |
| Programming Time | 10 µs per Byte/Word typical |
| Memory Size | 16 Mbit (2 Mb × 8 or 1 Mb × 16) |
| Number of Memory Blocks | 35 (1 Boot, 2 Parameter, 32 Main) |
| Program/Erase Endurance | 100 000 cycles per block |
| Package Options | TSOP48 (12 × 20 mm) and TFBGA48 (6 × 8 mm) |
It operates from 2.7 V to 3.6 V.
Each block is rated for 100 000 program/erase cycles.
They are available in a 48‑lead TSOP (12 × 20 mm) and a 48‑ball TFBGA (6 × 8 mm).
Typical programming time is 10 µs per byte or word.