The SGS‑THOMSON SD1727 (THX15) is a 50 V epitaxial silicon NPN planar transistor optimized for SSB communications, delivering up to 150 W PEP with 14 dB gain.
The SD1727 (THX15) transistor is designed for high‑power SSB applications at 30 MHz. It features an epitaxial silicon NPN structure, emitter ballasting for ruggedness, gold metallisation, and an epoxy‑sealed package.
Key electrical ratings include a collector‑base voltage of 110 V, collector‑emitter voltage of 55 V, and a maximum device current of 10 A. Thermal data show a junction temperature rating of +200 °C and a junction‑case thermal resistance of 0.75 °C/W. Typical performance provides 150 W PEP output, 14 dB gain, and an IMD of –30 dBc.
| Collector‑Base Voltage (VCBO) | 110 V |
|---|---|
| Collector‑Emitter Voltage (VCEO) | 55 V |
| Emitter‑Base Voltage (VEBO) | 4.0 V |
| Device Current (IC) | 10 A |
| Power Dissipation (PDISS) | 233 W |
| Junction Temperature (Tj) | +200 °C |
| Output Power (POUT) at 30 MHz | 150 W |
| Gain | 14 dB |
| Intermodulation Distortion (IMD) | -30 dBc |
The maximum collector‑emitter voltage is 55 V.
It can deliver up to 150 W PEP at 30 MHz.
The transistor provides a typical gain of 14 dB.
The maximum device current is 10 A.