Technical datasheet for the IRFH5020PbF HEXFET Power MOSFET, detailing specifications, features, and application information in a PQFN 5x6mm package.
This document is a datasheet for the IRFH5020PbF HEXFET Power MOSFET, available in a PQFN 5mm x 6mm Tape and Reel package. It provides comprehensive electrical characteristics, including a maximum drain-to-source voltage of 200V and a typical on-resistance of 55 mΩ. The device is designed for applications such as secondary side synchronous rectification, inverters for DC motors, and DC-DC brick applications.
| Static Drain-to-Source On-Resistance | 55 mΩ |
|---|---|
| Package Type | PQFN 5mm x 6mm |
| Total Gate Charge | 36 nC |
It is suitable for secondary side synchronous rectification, inverters for DC motors, and DC-DC brick applications.
Yes, the device is RoHS compliant, containing no lead, no bromide, and no halogen.
The component has a Moisture Sensitivity Level (MSL) of 1.