Alpha & Omega Semiconductor AO4401 P-Channel Enhancement Mode Field Effect Transistor Datasheet

The Alpha & Omega Semiconductor AO4401 is a P‑Channel enhancement mode field‑effect transistor with -30 V VDS, -6.1 A ID, and low RDS(on) values.


Alpha & Omega Semiconductor AO4401 P-Channel Enhancement Mode Field Effect Transistor Datasheet - cover page
Brand
Alpha
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
6
File format
PDF
File size
207 KB
Published
10 May, 2012
Updated
30 September, 2026
MD5 checksum
3CE1A87A68CD3F6C58FD8122ECD802A2

About this manual

The AO4401 P‑Channel enhancement mode FET is designed for use as a load switch or in PWM applications. It features advanced trench technology that provides low gate charge and operation with gate voltages as low as 2.5 V.

The device is supplied in an SO‑8 package and offers a maximum drain‑source voltage of -30 V, a continuous drain current of -6.1 A, and typical on‑resistance values below 46 mΩ at VGS = -10 V. Thermal resistance from junction to ambient is 40 °C/W, and key capacitances include Ciss = 940 pF and Coss = 104 pF.

What's inside

  • Features
  • General Description
  • Electrical Characteristics
  • Thermal Characteristics
  • Package Dimensions
  • Tape and Reel Data

Specifications

Maximum Drain‑Source Voltage (VDS)-30 V
Gate Threshold Voltage (VGS(th))-0.7 to -1.3 V
Input Capacitance (Ciss)940 pF
Package TypeSO‑8
Thermal Resistance Junction‑to‑Ambient (RθJA)40 °C/W

Frequently asked questions

What is the maximum drain‑source voltage for the AO4401?

The AO4401 can withstand a maximum drain‑source voltage of -30 V.

What package does the AO4401 use?

The AO4401 is supplied in an SO‑8 (SOIC‑8) surface‑mount package.

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