This document is a product bulletin and datasheet for the Optek Technology OP245 series devices. These are 890 nm high intensity gallium aluminum arsenide (GaAlAs) infrared emitting diodes molded in IR transmissive amber tinted epoxy packages with side-looking designs suitable for space-limited applications.
| Spectral Bandwidth | 80 nm |
|---|---|
| Emission Angle at Half Power Points | 40 Deg. |
| Output Rise Time | 500 ns |
| Operating Temperature Range | -40° C to +100° C |
The typical spectral bandwidth between half power points for these devices is 80 nm.
The device measures 0.180 inches (4.57 mm) in height and has a lead spacing of 0.15 inches (3.81 mm).
The devices can operate from -40° C to +100° C.
The peak forward current is rated at 3.0A for a 1 µs pulse width.