FDP39N20 is a N-channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation. This device uses Fairchild's proprietary planar stripe DMOS technology. It features low on-state resistance, fast switching, 100% avalanche testing, and is well suited for high efficiency switched mode power supplies and active power factor correction applications.
This document is a datasheet for the Fairchild FDP39N20, a 200V N-Channel enhancement mode power MOSFET. The device utilizes Fairchild's proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance. It is well-suited for high efficient switched mode power supplies and active power factor correction applications.
| Drain-Source Voltage | 200 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 39 A |
| Power Dissipation (Tc = 25°C) | 251 W |
| Operating and Storage Temperature Range | -55 to +150 °C |