This document is about the FDB3652/FDP3652/FDI3652 N-Channel PowerTrench® MOSFET product information manual released by Fairchild Semiconductor Corporation in 2002
This document is a datasheet for the Fairchild Semiconductor FDB3652, FDP3652, and FDI3652 series of N-Channel PowerTrench MOSFETs. These devices are rated at 100V drain-to-source voltage and 61A continuous current with a typical on-resistance of 14mΩ.
| Drain to Source Voltage (Vdss) | 100 V |
|---|---|
| Continuous Drain Current (Tj=25°C, Vgs=10V) | 61 A |
| On-Resistance (Typical) | 14 mΩ |
| Total Gate Charge (Typical) | 41 nC |
| Power Dissipation | 150 W |
| Operating Temperature Range | -55 to +175 °C |
The maximum rated power dissipation is 150 W.