1N4001 is a Schottky diode from Toshiba. It has a rated current of 1A and a reverse peak voltage of 50-2000V. The package is DO-204AL. The maximum average forward rectified current at 75°C is 1A. The maximum peak forward current at 15Hz or greater is 10A. The maximum forward surge current at 50Hz half sine-wave is 50A.
This datasheet provides technical data for a range of Diotec silicon rectifier models, specifically the 1N 4001 through 1N 4007 series as well as the EM 513, EM 516, and EM 518 variants. The document details maximum ratings such as repetitive peak reverse voltage ranging from 50V to 2000V and average forward rectified current of 1A.
Key electrical characteristics include a forward voltage drop of less than 1.1V at 25°C, leakage currents under specific conditions, and a thermal resistance junction-to-ambient air of less than 45 K/W. The components are housed in plastic DO-41 cases with UL94V-0 classification. This manual is written in German.
| Nominal current | 1 A |
|---|---|
| Max. average forward rectified current (Tj=75°C) | 1 A |
| Operating junction temperature (Tj) | -50 +175 °C |
| Forward voltage (VF) at Tj=25°C, IF=1A | < 1.1 V |
| Thermal resistance junction to ambient air (RthA) | < 45 K/W |
The maximum average forward rectified current is 1 A when the ambient temperature is 75 C.
The operating junction temperature ranges from -50 C to +175 C.
The forward voltage is less than 1.1 V at a junction temperature of 25 C and 1 A current.