ISSI's 9 Meg NLP/NVP product family is a high-speed, low-power synchronous static RAM designed to provide a burstable, high-performance, 'no wait' state, low-power solution.
The document details the IS6INLP/NVP product family of high-speed, low-power synchronous static RAMs. These devices are organized as 256K words by 36 bits or 512K words by 18 bits and utilize ISSI's advanced CMOS technology.
Key features include a 'no wait' state that eliminates cycles when switching between read and write operations, an internal self-timed write cycle, and individual byte write control. The SRAMs support interleaved or linear burst sequences via the MODE input and offer three chip enables for depth expansion.
| Organization (NVP) | 256K x 36 and 512K x 18 |
|---|---|
| Organization (NLP) | 256K x 36 and 512K x 18 |
| Capacity (NVP) | 9Mb |
| Clock Access Time | 26 ns |
| Cycle Time | 45 ns |
| Frequency (NVP) | 200 MHz |
The power supply voltage (Vop) for NVP devices is 2.5V with a +5% tolerance.
The power supply voltage (Vop) for NLP devices is 3.3V with a +5% tolerance.
The devices are available in JEDEC 100-pin TQFP, 165-ball PBGA, and 119-ball PBGA packages.