ISSI IS63LV1024 128K x 8 High-Speed CMOS Static RAM Datasheet

IS63LV1024 is a 128K x 8 high-performance CMOS static RAM with 3.3V revolutionary pinout. It is fabricated using ISSI's high-performance CMOS technology, which provides high reliability and low power consumption. When CE is HIGH, the device enters a standby mode with a power dissipation of 250µW.


ISSI IS63LV1024 128K x 8 High-Speed CMOS Static RAM Datasheet - cover page
Brand
ISSI
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
8
File format
PDF
File size
69 KB
Published
04 June, 2012
Updated
30 September, 2023
MD5 checksum
EE1C174D0BEB0DD444FCF052B899F9B1

About this manual

The IS63LV1024 provides high‑speed access times of 8‑15 ns, TTL‑compatible inputs, and a single 3.3 V power supply. It features multiple center power and ground pins for noise immunity and offers easy memory expansion with CE and OE options.

The device is offered in several 32‑pin packages (300‑mil SOJ, 400‑mil SOJ, TSOP Type II) and supports both commercial (0 °C to +70 °C) and industrial (‑40 °C to +85 °C) temperature ranges. Detailed electrical and timing specifications are provided for both read and write cycles.

What's inside

  • Features
  • Pin Configuration
  • Electrical Characteristics
  • Timing Characteristics
  • Ordering Information

Specifications

Access time8‑15 ns
Supply voltage3.3 V
Power dissipation (max)1.0 W
Standby power (CE high)250 µW typical
Operating temperature (commercial)0 °C to +70 °C
Package options32‑pin SOJ (300‑mil, 400‑mil), 32‑pin TSOP (Type II)

Frequently asked questions

What is the standby power consumption when CE is high?

When CE is high, the device can reduce power dissipation to about 250 µW typical.

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