The Infineon T1930N IFBIP D AEC phase‑control thyristor datasheet provides electrical, thermal and mechanical specifications.
About this manual
This datasheet describes the characteristics of the Infineon T1930N IFBIP D AEC phase‑control thyristor. It includes maximum voltage and current ratings, thermal limits, mechanical dimensions and typical performance curves for various conduction angles.
Key parameters such as forward and reverse peak voltages, RMS on‑state current, holding and latching currents, as well as thermal resistance and allowable junction temperature are listed. The document also contains usage conditions and warranty information intended for technically trained personnel. This manual is written in German.
What's inside
- Electrical properties
- Thermal properties
- Mechanical properties
- Characteristic values
- Thermal impedance
- On‑state characteristic
- Gate characteristics
- Usage conditions
Specifications
| Maximum forward voltage (VDRM) | 3200‑3800 V |
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| Maximum RMS on‑state current (I_TRMSM) | 4200 A |
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| Holding current (I_H) | 300 mA |
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| Latching current (I_L) | 1500 mA |
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| Maximum junction temperature (T_vj max) | 125 °C |
Frequently asked questions
What is the maximum forward voltage rating?
The thyristor can withstand a forward peak voltage of 3200 – 3800 V.
What is the maximum RMS on‑state current?
The maximum RMS on‑state current is specified as 4200 A.
What is the maximum junction temperature allowed?
The device is rated for a maximum junction temperature of 125 °C.
Who should use this datasheet?
The data sheet is intended exclusively for technically trained staff.