Data sheet for Infineon's IPA50R380CE CoolMOS CE power MOSFET, detailing ratings, electrical and thermal characteristics, and package information.
The IPA50R380CE is a 500 V CoolMOS™ CE power MOSFET designed with superjunction technology for high‑efficiency, cost‑sensitive applications. This datasheet provides the key performance parameters, maximum ratings, and recommended usage guidelines.
It includes electrical and thermal characteristic tables, test circuit diagrams, package outlines, and revision history, allowing designers to evaluate the device for PFC, hard‑switching, PWM and resonant‑switching stages.
| Drain‑source breakdown voltage (VBRDSS) | 500 V |
|---|---|
| Continuous drain current (ID) | 14.1 A |
| On‑state resistance (RDS(on)) | 0.38 Ω max |
| Gate charge (Qg, typ) | 24.8 nC |
| Thermal resistance, junction‑to‑case (RthJC) | 4.28 °C/W |
| Power dissipation (Ptot, FullPAK, 25 °C) | 29.2 W |
| Input capacitance (Ciss) | 584 pF |
| Output capacitance (Coss) | 40 pF |
| Avalanche energy (EAS, single pulse) | 173 mJ |
The device is rated for a maximum drain‑source breakdown voltage of 500 V.
It can conduct a continuous drain current of up to 14.1 A.
The typical total gate charge is 24.8 nC.
The FullPAK package can dissipate up to 29.2 W at 25 °C.