RB751S-40 / RB751V-40 Schottky barrier diode is a surface mount device from ROHM for high speed switching and detection. It features low reverse current and low forward voltage, as well as high reliability.
This document provides technical specifications for the ROHM RB751S-40 and RB751V-40 Schottky barrier diodes. These components are designed for high speed switching and detection applications, featuring a small surface mounting type with low reverse current and low forward voltage. The diodes are constructed using silicon epitaxial planar technology.
| Mean rectifying current | 30 mA |
|---|---|
| Storage temperature | -40~+125 °C |
| Forward voltage (Typ.) | 0.37 V |
| Reverse current (Max.) | 0.5 µA |
| Capacitance (Typ.) | 2.0 pF |
The diode supports a mean rectifying current of up to 30 mA.
The device can operate with a junction temperature of 125 °C.