This document describes the features and characteristics of the RB731U Schottky barrier diode, including high-speed switching, small surface mounting type, low VF and low IR. The RB731U is a silicon epitaxial planar diode with three diodes in parallel for easy installation.
The document describes the ROHM RB731U, a Schottky barrier diode designed for high speed switching applications. It features a small surface mounting type (SMD6) construction and includes three diodes in parallel to facilitate easy installation.
Key specifications include an absolute maximum peak reverse voltage of 40 V and a mean rectifying current of 30 mA. The device operates within a junction temperature range up to 125 °C and requires ESD sensitive product handling.
| Peak reverse voltage (VRM) | 40 V |
|---|---|
| DC reverse voltage (VR) | 40 V |
| Mean rectifying current (IO) | 30 mA |
| Peak forward surge current (IFSM) | 200 mA |
| Junction temperature (Tj) | 125 °C |
| Storage temperature (Tstg) | -40∼+125 °C |
It is designed for high speed switching applications.
The device features three diodes in parallel for easy installation.