FDMS3672 N-Channel UltraFET Trench MOSFET, max rDS(on) is 23mΩ, max ID is 22A, typical Qg is 31nC. These devices are ideal for high frequency DC-DC converters.
The FDMS3672 is an N-Channel UltraFET Trench MOSFET designed for high-frequency DC-DC converter applications. It features a maximum drain-to-source voltage of 100V and a continuous drain current of 22A (package limited). The device is optimized for low on-resistance, low gate charge, and high efficiency.
| Drain to Source Voltage | 100 V |
|---|---|
| Continuous Drain Current (Package limited) | 22 A |
| Continuous Drain Current (Silicon limited) | 41 A |
| Pulsed Drain Current | 7.4 A |
| Power Dissipation (TC = 25°C) | 78 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Case | 1.6 °C/W |
| Thermal Resistance, Junction to Ambient | 50 °C/W |
| Max rDS(on) at VGS = 10V | 23 mΩ |
| Typical Total Gate Charge at 10V | 31 nC |
The maximum drain-to-source voltage is 100 V.
The continuous drain current is 22 A when package limited at TC = 25°C.
Yes, the device is RoHS Compliant.
The typical total gate charge is 31 nC at VGS = 10V.